| PART |
Description |
Maker |
| XT49SL |
Quartz Crystals 3.579MHz - 66.0MHz, Reduced Height, Low Profile, Hermetically Sealed, Tape and Reel Option
|
Vishay
|
| T529P106M010AAE200 |
Tantalum, Polymer Tantalum, Reduced Volume, T529, 10 uF, 20%, 10 V, 2012, SMD, Polymer, Substrate, 200 mOhms, Height Max= 1mm
|
Kemet Corporation
|
| SI6820DQ |
N-Channel Reduced Qg / MOSFET with Schottky Diode
From old datasheet system
N-Channel, Reduced Qg, MOSFET with Schottky Diode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| IPL65R210CFD |
Reduced board space consumption
|
Infineon Technologies A...
|
| MT49H16M16 MT49H16M16FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|
| C527RT320-0303 C460RT320-0305 C470RT320-0301 C527R |
Reduced Forward Voltage 3.1 V Typical at 20 mA
|
Cree, Inc
|
| IPL65R190E6 |
Reduced board space consumption
|
Infineon Technologies A...
|
| SI4880DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| 9286-200 |
Reduced Thru Wire Connector 18-24 AWG: WTW
|
AVX Corporation
|
| SI7392ADP |
N-Channel Reduced Qg, Fast Switching WFET
|
Vishay Siliconix
|
| SI4384DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
